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Home > Products > Memory-chip turnover IXPEJDC021

characteristics
1. Inner intrinsic conduction path/network, anti-static good performance;
2. Do not need to use environment humidity can make electrostatic rapid leak, anti-static performance from ambient humidity influence;
3. Antistatic timeliness for permanent antistatic. From environmental dry humidity influence;
4. Good electrical conductivity, electrostatic index 10 ^ 3-10 ^ 9 Ω/sq;
5. Buffer shock absorption excellent performance: independent and close the closing of the bubble hole;
6. High temperature resistant: EPE, IXPE highest temperature resistant 120 ° C;
7. Resistance to chemical corrosion: resistance to organic solvent, acid, alkali, etc.;
No chemical corrosion: the components and packing materials without any corrosion;
9. Heat insulation, sound insulation, not bibulous, moistureproof,
Good secondary processing performance, easy molding.